IEEE International Conference on Microelectronic Test Structures
ICMTS 2014 Program
2014 Program Booklet
By First Author
| A novel apparatus for the volume estimation of in vitro thrombus growth A. Affanni, R. Specogna, F. Trevisan Dept. of Electrical, Mechanical and Management Engineering, University of Udine, Udine, Italy DOI: 10.1109/ICMTS.2014.6841472 HOVER FOR ABSTRACT | PDF Xplore | |
| Process parameter calibration for millimeter-wave CMOS back-end device design with electromagnetic field analysis S. Amakawa, A. Orii, K. Katayama, K. Takano, M. Motoyoshi, T. Yoshida, M. Fujishima Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Japan DOI: 10.1109/ICMTS.2014.6841490 HOVER FOR ABSTRACT | PDF Xplore | |
 | Circuits to measure the delay variability of MOSFETs K. Balakrishnan, K. Jenkins IBM T.J. Watson Research Center, Yorktown Heights, NY, USA DOI: 10.1109/ICMTS.2014.6841480 HOVER FOR ABSTRACT | PDF Xplore |
| Effects of metal spacing and poly-silicon layers on pulsed-laser single event transient testing J. Bi, C. Zeng, L. Gao, D. Li, G. Liu, J. Luo, Z. Han, Z. Han1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China 1School of Microelectronics, University of Chinese Academy of Sciences, Beijing, China DOI: 10.1109/ICMTS.2014.6841494 HOVER FOR ABSTRACT | PDF Xplore | |
| Gated contact chains for process characterization in FinFET technologies T. Brozek, S. Lam, S. Yu, M. Pak, T. Liu, R. Valishayee, N. Yokoyama1 PDF Solutions, San Jose, CA, USA 1PDF Solutions, KK, Tokyo, Japan DOI: 10.1109/ICMTS.2014.6841469 HOVER FOR ABSTRACT | PDF Xplore | |
| An approach to characterize ultra-thin conducting films protected against native oxidation by an in-situ capping layer H. Van Bui, F. B. Wiggers, M. P. de Jong, A. Y. Kovalgin MESA+ Institute for Nanotechnology, University of Twente, Enschede, AE, The Netherlands DOI: 10.1109/ICMTS.2014.6841467 HOVER FOR ABSTRACT | PDF Xplore | |
| A compact array for characterizing 32k transistors in wafer scribe lanes C. S. Chen, L. Lil1, Q. Lim, H. H. Teh, N. F. Binti Omar, C. L. Ler2, J. T. Watt Process Technology Development, Altera Corporation, San Jose, CA, USA 1Altera Corp, San Jose, CA, US 2Process Technology Development, Altera Corporation, Penang, Malaysia DOI: 10.1109/ICMTS.2014.6841497 HOVER FOR ABSTRACT | PDF Xplore | |
| Analysis of process impact on local variability thanks to addressable transistors arrays A. Cros, T. Quemerais, A. Bajolet, Y. Carminati, P. Normandon, F. Kergomard, N. Planes, D. Petit, F. Arnaud, J. Rosa Crolles Site, STMicroelectronics, France DOI: 10.1109/ICMTS.2014.6841498 HOVER FOR ABSTRACT | PDF Xplore | |
| A semi-distributed method for inductor de-embedding J. Dang, A. Noculak1, F. Korndörfer2, C. Jungemann1, B. Meinerzhagen BST, TU, Braunschweig, Germany 1ITHE, RWTH Aachen University, Aachen, Germany 2IHP GmbH, Frankfurt (Oder), Germany DOI: 10.1109/ICMTS.2014.6841482 HOVER FOR ABSTRACT | PDF Xplore | |
| Common-floating gate test structure for separation of cycling-induced degradation components in split-gate flash memory cells N. Do, Y. Tkachev Silicon Storage Technology, Inc. (a subsidiary of Microchip Technology Inc.), San Jose, CA, USA DOI: 10.1109/ICMTS.2014.6841465 HOVER FOR ABSTRACT | PDF Xplore | |
| Matched test structures for accurate characterization in millimeter wave range R. Hamani, C. Andrei1, B. Jarry, J. Lintignat XLIM, Limoges, France 1NXP Semiconductors, France DOI: 10.1109/ICMTS.2014.6841483 HOVER FOR ABSTRACT | PDF Xplore | |
| Direct probing characterization vehicle test chip for wafer level exploration of transistor pattern on product chips C. Hess, L. Weiland, A. Joag, B. Murugan, S. Zhao, K. Doong1, S. Lin1, H. Eisenmann2 PDF Solutions Inc., San Jose, CA, USA 1PDF Solutions Inc., Zhubei City, Hsinchu County, Taiwan, R.O.C. 2PDF Solutions Inc., Munich, Germany DOI: 10.1109/ICMTS.2014.6841496 HOVER FOR ABSTRACT | PDF Xplore | |
| Accurate modeling of dynamic variability of SRAM cell in 28 nm FDSOI technology J. El Husseini, A. Subirats, X. Garros, A. Makoseij, O. Thomas, G. Reimbold, V. Huard1, F. Cacho1, X. Federspiel1 CEA-Leti, Grenoble, France 1STMicroelectronics, Crolles cedex, France DOI: 10.1109/ICMTS.2014.6841466 HOVER FOR ABSTRACT | PDF Xplore | |
| In-situ variability characterization of individual transistors using topology-reconfigurable ring oscillators A. K. M. Mahfuzul Islam, H. Onodera Graduate School of Informatics, Kyoto University, Sakyo-ku, Kyoto, JAPAN DOI: 10.1109/ICMTS.2014.6841479 HOVER FOR ABSTRACT | PDF Xplore | |
| A new technique for probing the energy distribution of positive charges in gate dielectric Z. Ji, S. W. M. Hatta, J. F. Zhang, W. Zhang, J. Niblock, P. Bachmayr, L. Stauffer, K. Wright, S. Greer School of Engineering, Liverpool John Moores University, Liverpool, UK DOI: 10.1109/ICMTS.2014.6841470 HOVER FOR ABSTRACT | PDF Xplore | |
| A test structure for analysis of temperature distribution in stacked IC with sensing device array T. Matsuda, K. Yamada, H. Iwata, T. Hatakeyama, M. Ishizuka, T. Ohzone1 Toyama Prefectural University, Toyama, Japan 1Dawn Enterprise, Nagoya, Japan DOI: 10.1109/ICMTS.2014.6841476 HOVER FOR ABSTRACT | PDF Xplore | |
| Thickness evaluation of deposited pureb layers in micro-/millimeter-sized windows to Si V. Mohammadi, S. Ramesh, L. K. Nanver Dept. Microelectronics, Delft University of Technology, Delft, CT, The Netherlands DOI: 10.1109/ICMTS.2014.6841492 HOVER FOR ABSTRACT | PDF Xplore | |
| A test structure of bypass diodes for on-chip high-voltage silicon photovoltaic cell array I. Mori, M. Kubota, Y. Mita Department of Electrical Engineering, The University of Tokyo, Tokyo, Japan DOI: 10.1109/ICMTS.2014.6841485 HOVER FOR ABSTRACT | PDF Xplore | |
| Effective field and universal mobility in high-k metal gate UTBB-FDSOI devices O. Nier, D. Rideau1, A. Cros1, F. Monsieur1, G. Ghibaudo2, R. Clerc3, J. C. Barbé4, C. Tavernier1, H. Jaouen1 DIEGM, University of Udine, Udine, Italy 1STMicroelectronics, Crolles, France 2IMEP-LAHC, Grenoble 3Laboratoire Hubert Curien (UMR 5516), Institut d'Optique Graduate School, Saint-Etienne, France 4CEA-LETI, Grenoble, France DOI: 10.1109/ICMTS.2014.6841460 HOVER FOR ABSTRACT | PDF Xplore | |
| On wafer silicon integrated noise source characterization up to 110 GHz based on Germanium-on-Silicon photodiode S. Oeuvrard, J. . -F. Lampin, G. Ducournau, S. Lepilliet, F. Danneville, T. Quemerais1, D. Gloria1 IEMN, Villeneuve d'Ascq, France 1STMicroelectronics, Crolles Cedex, France DOI: 10.1109/ICMTS.2014.6841484 HOVER FOR ABSTRACT | PDF Xplore | |
| Low specific contact resistivity nickel to silicon carbide determined using a two contact circular test structure Y. Pan, A. M. Collins, P. W. Leech, G. K. Reeves, A. S. Holland1, P. Tanner2 School of Electrical and Computer Engineering, RMIT University, Melbourne, Australia 1Centre of Technology, RMIT University, Ho Chi Minh City, Vietnam 2Queensland Microtechnology Facility, Griffith University, Brisbane, Australia DOI: 10.1109/ICMTS.2014.6841471 HOVER FOR ABSTRACT | PDF Xplore | |
| A single-photon avalanche diode test chip in 150nm CMOS technology L. Pancheri, G. -F. Dalla Betta, L. H. Campos Braga1, H. Xu1, D. Stoppa1 DII, University of Trento Via Sommarive, Trento, Italy 1Fondazione Bruno Kessler, Trento, Italy DOI: 10.1109/ICMTS.2014.6841486 HOVER FOR ABSTRACT | PDF Xplore | |
| Split-CV for pseudo-MOSFET characterization: Experimental setups and associated parameter extraction methods L. Pirro, I. Ionica, G. Ghibaudo, S. Cristoloveanu IMEP-LAHC Grenoble, France DOI: 10.1109/ICMTS.2014.6841461 HOVER FOR ABSTRACT | PDF Xplore | |
| Cascode configuration as a substitute to LDE MOSFET for improved electrical mismatch performance L. Rahhal, G. Bertrand1, A. Bajolet1, J. Rosa1, G. Ghibaudo IMEP-LAHC, Grenoble, France 1STMicroelectronics, France DOI: 10.1109/ICMTS.2014.6841499 HOVER FOR ABSTRACT | PDF Xplore | |
| Air-CPW test structure for broadband permeability spectra measurements of thin ferromagnetic films E. Sirotkin, R. Walker, J. G. Terry, S. Smith, A. J. Walton Scottish Microelectronics Centre, University of Edinburgh, Edinburgh, UK DOI: 10.1109/ICMTS.2014.6841489 HOVER FOR ABSTRACT | PDF Xplore | |
| Test structure to evaluate the impact of neighboring features on stress of metal interconnects B. Smith, M. Shroff Freescale Semiconductor, Inc., Austin, TX DOI: 10.1109/ICMTS.2014.6841495 HOVER FOR ABSTRACT | PDF Xplore | |
| Extraction procedure for emitter series resistance contributions in SiGeC BiCMOS technologies F. Stein, Z. Huszka1, N. Derrier2, C. Maneux, D. Celi2 IMS, Université Bordeaux I, Talence, France 1AMS AG, Unterpremstatten, Austria 2STMicroelectronics, France DOI: 10.1109/ICMTS.2014.6841462 HOVER FOR ABSTRACT | PDF Xplore | |
| Characterization and development of materials for an integrated high-temperature sensor using resistive test structures A. Tabasnikov, A. S. Bunting, J. G. Terry, J. Murray, G. Cummins1, C. Zhao2, J. Zhou2, R. Y. Fu2, M. P. Y. Desmulliez1, A. J. Walton, S. Smith Institute for Integrated Micro and Nano Systems, The University of Edinburgh, Edinburgh, UK 1School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh, UK 2School of Engineering, University of the West of Scotland, Paisley, UK DOI: 10.1109/ICMTS.2014.6841491 HOVER FOR ABSTRACT | PDF Xplore | |
| Understanding the switching mechanism of charge-injection GeTe/Sb2Te3 phase change memory through electrical measurement and analysis of 1R test structure N. Takaura, T. Ohyanagi, M. Tai, M. Kitamura, M. Kinoshita, K. Akita, T. Morikawa, S. Kato1, M. Araidai1, K. Kamiya1, T. Yamamoto1, K. Shiraishi1 Phase Change Device Research Group, Low-power Electronics Association & Project (LEAP), Tsukuba, Ibaraki, Japan 1Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki, Japan DOI: 10.1109/ICMTS.2014.6841464 HOVER FOR ABSTRACT | PDF Xplore | |
| Test structure for electrical characterization of copper nanowire anisotropic conductive film (NW-ACF) for 3D stacking applications J. Tao, A. Mathewson, K. M. Razeeb Microsystems Center, Tyndall National Institute, Cork, Ireland DOI: 10.1109/ICMTS.2014.6841487 HOVER FOR ABSTRACT | PDF Xplore | |
| Reconsideration of effective MOSFET channel length extracted from channel resistance K. Terada Faculty of Information Sciences, Hiroshima City University, Hiroshima, JAPAN DOI: 10.1109/ICMTS.2014.6841459 HOVER FOR ABSTRACT | PDF Xplore | |
| Compressively-stressed test structures for opaque micro-stmctures releasing visualization A. Tixier-Mita, E. Lebrasseur, T. Takahashi, Y. Mita1, H. Fujita1, H. Toshiyoshi2, F. Olivier2, L. P. Bruno2 The University of Tokyo, Tokyo, Japan 1Tokyo Daigaku, Bunkyo-ku, Tokyo, JP 2Departernent SATIE/IFR, Ecole Nationale Supérieure Cachan, France DOI: 10.1109/ICMTS.2014.6841488 HOVER FOR ABSTRACT | PDF Xplore | |
| A novel compact model of the product marginal yield and its application for performance maximization A. Tsuda, T. Okagaki, M. Fujii, T. Tsutsui, Y. Takazawa, K. Shibutani, S. Ogasawara, M. Yokota, K. Onozawa Device Platform Dep, Renesas Electronics Corporation, Itami, Hyogo, Japan DOI: 10.1109/ICMTS.2014.6841478 HOVER FOR ABSTRACT | PDF Xplore | |
| Evaluation of ultra-low specific contact resistance extraction by cross-bridge Kelvin resistor structure and transmission line method structure B. -Y. Tsui, H. -T. Tseng Department of Electronics Engineering, National Chiao-Tung University, Hsinchu, Taiwan R. O. C DOI: 10.1109/ICMTS.2014.6841468 HOVER FOR ABSTRACT | PDF Xplore | |
| Comparison of channel length extracted from gate capacitance with that extracted from channel resistance K. Tsuji, K. Terada Faculty of Information Sciences, Hiroshima City University, Hiroshima, JAPAN DOI: 10.1109/ICMTS.2014.6841473 HOVER FOR ABSTRACT | PDF Xplore | |
| A cross-coupled common centroid test structures layout method for high precision MIM capacitor mismatch measurements H. Tuinhout, N. Wils NXP Semiconductors - Central R&D, Design Platforms Organization, High Tech Campus Eindhoven, the Netherlands DOI: 10.1109/ICMTS.2014.6841500 HOVER FOR ABSTRACT | PDF Xplore | |
| Calibration methods for silicon nanowire BioFETs A. Vacic, J. M. Criscione, E. Stern, N. K. Rajan1, T. Fahmy, M. A. Reed1 Yale University, New Haven, CT, US 1Yale University, New Haven, CT, USA DOI: 10.1109/ICMTS.2014.6841493 HOVER FOR ABSTRACT | PDF Xplore | |
| Characterisation of residual stress in dielectric films studied by automated wafer mapping R. Walker, E. Sirotkin, G. Schiavone, J. G. Terry, S. Smith, A. R. Mount1, M. P. Y. Desmulliez2, A. J. Walton Institute of Integrated Micro and Nano Systems, The University of Edinburgh, UK 1School of Chemistry, The University of Edinburgh, UK 2MIcroSystems Engineering Centre, Heriot-Watt University, Edinburgh, UK DOI: 10.1109/ICMTS.2014.6841475 HOVER FOR ABSTRACT | PDF Xplore | |
| Effect of seed layers on the performance of planar spiral microinductors R. Walker, E. Sirotkin, J. G. Terry, S. Smith, M. P. Y. Desmulliez1, A. J. Walton Institute of Integrated Micro and Nano Systems, The University of Edinburgh, UK 1Heriot-Watt University, Edinburgh, Edinburgh, GB DOI: 10.1109/ICMTS.2014.6841481 HOVER FOR ABSTRACT | PDF Xplore | |
| 3D IC testing using a chip prober and a transparent membrane probe card N. Watanabe, M. Aoyagi, M. Eto1, K. Kawano1 Nano-electronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba-shi, Ibaraki, Japan 1STK TECHNOLOGY CO., LTD., Oita-shi, Oita, Japan DOI: 10.1109/ICMTS.2014.6841474 HOVER FOR ABSTRACT | PDF Xplore | |
| Processor yield at 14nm and beyond G. Yeric Research and Development, ARM Austin, TX, USA DOI: 10.1109/ICMTS.2014.6841477 HOVER FOR ABSTRACT | PDF Xplore | |
| Statistical analysis of resistive switching characteristics in ReRAM test arrays C. Zambelli, A. Grossi, P. Olivo, D. Walczyk1, T. Bertaud1, B. Tillack1, T. Schroeder2, V. Stikanov3, C. Walczyk1 Dipartimento di Ingegneria, Università degli Studi di Ferrara, Ferrara, Italy 1IHP Microelectronics, Frankfurt (Oder), Germany 2Brandenburgische Technische Universität, Cottbus, Germany 3IASA, Kiev, Ukraine DOI: 10.1109/ICMTS.2014.6841463 HOVER FOR ABSTRACT | PDF Xplore |
