IEEE International Conference on Microelectronic Test Structures
ICMTS 2013 Program
2013 Program Booklet
By First Author
| A new measurement set-up to investigate the charge trapping phenomena in RF MEMS packaged switches M. Barbato, V. Giliberto, G. Meneghesso Department of Information Engineering, University of Padova, Padova, Italy DOI: 10.1109/ICMTS.2013.6528140 HOVER FOR ABSTRACT | PDF Xplore | |
| Test structure and analysis for accurate RF-characterization of tungsten through silicon via (TSV) grounding devices V. Blaschke, H. Jebory1 TowerJazz Semiconductors Limited, Newport, CA, USA 1TowerJazz Semiconductors Limited, Newport Beach, CA, USA DOI: 10.1109/ICMTS.2013.6528141 HOVER FOR ABSTRACT | PDF Xplore | |
| Characterization and simulation of NMOS pass transistor reliability for FPGA routing circuits C. S. Chen, J. T. Watt Process Technology Development, Altera Corporation, San Jose, CA, USA DOI: 10.1109/ICMTS.2013.6528175 HOVER FOR ABSTRACT | PDF Xplore | |
| Process control monitors for individual single-walled carbon nanotube transistor fabrication processes K. Chikkadi, M. Haluska, C. Hierold, C. Roman Micro and Nanosystems, Department of Mechanical and Process Engineering, ETH Zurich, Zurich, Switzerland DOI: 10.1109/ICMTS.2013.6528167 HOVER FOR ABSTRACT | PDF Xplore | |
| On-wafer integrated system for fast characterization and parametric test of new-generation Non Volatile Memories E. Covi, A. Cabrini, L. Vendrame1, L. Bortesi1, R. Gastaldi1, G. Torelli2 Dipartimento di Ingegneria Industriale e dellInformazione, University of Pavia, Pavia, Italy 1Micron Semiconductor Italia s.r.l., R&D - Technology Development, Agrate Brianza, Italy 2Universita degli Studi di Pavia, Pavia, Lombardia, IT DOI: 10.1109/ICMTS.2013.6528171 HOVER FOR ABSTRACT | PDF Xplore | |
| Greek cross test structure for inkjet printed thin films E. Däaz, E. Ramon, J. Carrabina CAIAC, Microelectronics and Electronic Systems Department, Universitat Autònoma de Barcelona, Barcelona, Spain DOI: 10.1109/ICMTS.2013.6528166 HOVER FOR ABSTRACT | PDF Xplore | |
| Investigation on safe operating area and ESD robustness in a 60-V BCD process with different deep P-Well test structures C. -T. Dai, M. -D. Ker Institute of Electronics, National Chiao-Tung University, Taiwan DOI: 10.1109/ICMTS.2013.6528158 HOVER FOR ABSTRACT | PDF Xplore | |
| A novel silicon interposer for measuring devices requiring complex two-sided contacting J. Derakhshandeh, N. Golshani, L. A. Steenweg, W. van der Vlist, L. K. Nanver DIMES, Delft University of Technology Engineering, Delft, Netherlands DOI: 10.1109/ICMTS.2013.6528143 HOVER FOR ABSTRACT | PDF Xplore | |
| Comparison of electrical techniques for temperature evaluation in power MOS transistors A. Ferrara, P. G. Steeneken1, K. Reimann1, A. Heringa2, L. Yan2, B. K. Boksteen, M. Swanenberg3, G. E. J. Koops2, A. J. Scholten2, R. Surdeanu2, J. Schmitz, R. J. E. Hueting MESA Institute for Nanotechnology, University of Twente, Enschede, Netherlands 1NXP Semiconductors, Eindhoven, Netherlands 2NXP Semiconductors, Leuven, Belgium 3NXP Semiconductors, Nijmegen, Netherlands DOI: 10.1109/ICMTS.2013.6528156 HOVER FOR ABSTRACT | PDF Xplore | |
| An integrated CMOS-MEMS probe having two-tips per cantilever for individual contact sensing and kelvin measurement with two cantilevers K. Hosaka, S. Morishita, I. Mori, M. Kubota, Y. Mita School of Engineering, University of Tokyo, Tokyo, Japan DOI: 10.1109/ICMTS.2013.6528136 HOVER FOR ABSTRACT | PDF Xplore | |
| A novel BJT structure for high- performance analog circuit applications S. -M. Hwang, H. -M. Kwon, J. -H. Jang, H. -Y. Kwak, S. -K. Kwon, S. -Y. Sung, J. -K. Shin, J. -N. Yu, I. -S. Han, Y. -S. Chung, J. -H. Lee, G. -W. Lee, H. -D. Lee Department of Electronics Engineering, Chungnam National University, Daejeon, South Korea DOI: 10.1109/ICMTS.2013.6528154 HOVER FOR ABSTRACT | PDF Xplore | |
| Three- and four-point Hamer-type MOSFET parameter extraction methods revisited K. O. Jeppson Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden DOI: 10.1109/ICMTS.2013.6528161 HOVER FOR ABSTRACT | PDF Xplore | |
| A new Ultra-Fast Single Pulse technique (UFSP) for channel effective mobility evaluation in MOSFETs Z. Ji, J. Gillbert1, J. F. Zhang, W. Zhang School of Engineering, Liverpool John Moores University, Liverpool, UK 1Keithley Instruments, Inc., UK DOI: 10.1109/ICMTS.2013.6528147 HOVER FOR ABSTRACT | PDF Xplore | |
| Benchmarking of a surface potential based organic thin-film transistor model against C10-DNTT high performance test devices T. K. Maiti, T. Hayashi1, H. Mori2, M. J. Kang2, K. Takimiya2, M. Miura-Mattausch3, H. J. Mattausch3 HiSIM Research Center, Hiroshima University, Higashi, Hiroshima, Japan 1Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi, Hiroshima, Japan 2Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Higashi, Hiroshima, Japan 3HiSIM Research Center, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi, Hiroshima, Japan DOI: 10.1109/ICMTS.2013.6528164 HOVER FOR ABSTRACT | PDF Xplore | |
| A test structure for analysis of temperature distribution in CMOS LSI with sensing device array T. Matsuda, H. Hanai, H. Iwata, D. Kondo, T. Hatakeyama, M. Ishizuka, T. Ohzone1 Department of Information Systems Engineering, Toyama Prefectural University, Imizu, Japan 1Dawn Enterprise Company Limited, Nagoya, Japan DOI: 10.1109/ICMTS.2013.6528159 HOVER FOR ABSTRACT | PDF Xplore | |
| Analysis of narrow gate to gate space dependence of MOS gate-source/drain capacitance by using contact-less and drawn-out source/drain test structure Y. Naruta, S. Kumashiro1 Renesas Electronics Corporation, Kodaira, Tokyo, Japan 1Renesas Electronics Corporation, Kawasaki, Kanagawa, Japan DOI: 10.1109/ICMTS.2013.6528160 HOVER FOR ABSTRACT | PDF Xplore | |
| Investigation of devices of in-vivo energy harvesting through blood-flow-like excitation R. O'Keeffe, N. Jackson, A. Mathewson, K. G. McCarthy1 Tyndall National Institute, University College Cork, Cork, Ireland 1Department of Electrical and Electronic Engineering, University College Cork, Cork, Ireland DOI: 10.1109/ICMTS.2013.6528139 HOVER FOR ABSTRACT | PDF Xplore | |
| Optical high frequency test structure and test bench definition for on wafer silicon integrated noise source characterization up to 110 GHz based on Germanium-on-Silicon photodiode S. Oeuvrard, J. . -F. Lampin, G. Ducournau, L. Virot1, J. M. Fedeli2, J. M. Hartmann2, F. Danneville, Y. Morandini3, D. Gloria1 IEMN, Villeneuve d'Ascq, France 1TR&D, TPS Laboratory, STMicroelectronics, Crolles, France 2LETI, CEA, Grenoble, France 3Dolphin Integration GmbH, Meylan, France DOI: 10.1109/ICMTS.2013.6528148 HOVER FOR ABSTRACT | PDF Xplore | |
| Die-to-die and within-die variation extraction for circuit simulation with surface-potential compact model Y. Ohnari, A. A. Khan, A. Dutta, M. Miura-Mattausch, H. J. Mattausch Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashi, Hiroshima, Japan DOI: 10.1109/ICMTS.2013.6528162 HOVER FOR ABSTRACT | PDF Xplore | |
 | Tr variance evaluation induced by probing pressure and its stress extraction methodology in 28nm High-K and Metal Gate process T. Okagaki, T. Hasegawa, H. Takashino, M. Fujii, A. Tsuda, K. Shibutani, Y. Deguchi, M. Yokota, K. Onozawa Renesas Electronics Corporation, Itami, Hyogo, Japan DOI: 10.1109/ICMTS.2013.6528172 HOVER FOR ABSTRACT | PDF Xplore |
| Mosaic SRAM Cell TEGs with intentionally-added device variability for confirming the ratio-less SRAM operation H. Okamura, T. Saito, H. Goto, M. Yamamoto, K. Nakamura Center for Microelectronic Systems, Kyushu Institute of Technology, Iizuka, Fukuoka, Japan DOI: 10.1109/ICMTS.2013.6528174 HOVER FOR ABSTRACT | PDF Xplore | |
| A novel test structure to implement a programmable logic array using split-gate flash memory cells H. Om'mani, M. Tadayoni, N. Thota, Ian Yue, Nhan Do A Subsidiary of Microchip Technology Inc., Silicon Storage Technology, San Jose, California, USA DOI: 10.1109/ICMTS.2013.6528170 HOVER FOR ABSTRACT | PDF Xplore | |
| On the length of THRU standard for TRL de-embedding on Si substrate above 110 GHz A. Orii, M. Suizu, S. Amakawa, K. Katayama, K. Takano, M. Motoyoshi, T. Yoshida, M. Fujishima Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Japan DOI: 10.1109/ICMTS.2013.6528150 HOVER FOR ABSTRACT | PDF Xplore | |
| Measurement and investigation of thermal properties of the on-chip metallization for integrated power technologies M. Pfost, C. Boianceanu1, I. Lascau1, D. -I. Simon1, S. Sosin1 Robert Bosch Center for Power Electronics, Reutlingen University, Reutlingen, Germany 1ATV PTP TM, Infineon Technologies Romania, Bucharest, Romania DOI: 10.1109/ICMTS.2013.6528157 HOVER FOR ABSTRACT | PDF Xplore | |
| A proper approach to characterize retention-after-cycling in 3D-Flash devices Fengying Qiao, A. Arreghini1, P. Blomme1, G. Van den bosch1, Liyang Pan, Jun Xu, J. Van Houdt1 Institute of Microelectronics, Tsinghua University, Beijing, China 1Imec, Leuven, Belgium DOI: 10.1109/ICMTS.2013.6528169 HOVER FOR ABSTRACT | PDF Xplore | |
| New methodology for drain current local variability characterization using Y function method L. Rahhal, A. Bajolet, C. Diouf, A. Cros, J. Rosa, N. Planes, G. Ghibaudo1 STMicroelectronics, Crolles, France 1Minatec , INPG, IMEP-LAHC, Grenoble, France DOI: 10.1109/ICMTS.2013.6528153 HOVER FOR ABSTRACT | PDF Xplore | |
| Newly developed Test-Element-Group for detecting soft failures of the low-resistance-element using doubly nesting array S. Sato, H. Shinkawata, A. Tsuda, T. Yoshizawa, T. Ohno Devices and Analysis Technology Div., Production and Technology Unit., Renesas Electronics Corporation, Hyogo, Japan DOI: 10.1109/ICMTS.2013.6528152 HOVER FOR ABSTRACT | PDF Xplore | |
| Characterization of capacitance mismatch using simple difference Charge-based Capacitance measurement (DCBCM) test structure K. Sawada, G. Van der Plas1, Y. Miyamori2, T. Oishi3, C. Vladimir1, A. Mercha1, V. Diederik1, H. Ammo3 IMEC, Sony Corporation, Leuven, Belgium 1IMEC, Leuven, Belgium 2Sony Semiconductor Corporation, Kumamoto, Japan 3Sony Corporation, Atsugi, Kanagawa, Japan DOI: 10.1109/ICMTS.2013.6528144 HOVER FOR ABSTRACT | PDF Xplore | |
| Measurements of SRAM sensitivity against AC power noise with effects of device variation T. Sawada, K. Yoshikawa, H. Takata1, K. Nii1, M. Nagata Graduate School of System Informatics, Kobe University, Kobe, Japan 1Renesas Electronics Corporation, Tokyo, Japan DOI: 10.1109/ICMTS.2013.6528149 HOVER FOR ABSTRACT | PDF Xplore | |
| Micromechanical test structures for the characterisation of electroplated NiFe cantilevers and their viability for use in MEMS switching devices G. Schiavone, S. Smith, J. Murray1, J. G. Terry, M. P. Y. Desmulliez2, A. J. Walton Institute for Integrated Micro and Nano Systems, Joint Research Institute for Integrated Systems, School of Engineering, Scottish Microelectronics Centre, University of Edinburgh, Edinburgh, UK 1Institute for Integrated Micro and Nano Systems, Joint Research Institute for Integrated Systems, School of Engineering, Scottish Microelectronics Centre, School of Chemistry, Joseph Black Building, University of Edinburgh, Edinburgh, UK 2MIcroSystems Engineering Centre, Joint Research Institute for Integrated Systems, School of Engineering & Physical Sciences, Heriot-Watt University, Edinburgh, UK DOI: 10.1109/ICMTS.2013.6528138 HOVER FOR ABSTRACT | PDF Xplore | |
| Electrical and mechanical characterizations of a large-area, printed organic transistor active matrix with floating-gate-based nonuniformity compensator T. Sekitani, T. Yokota, T. Tokuhara, T. Someya Department of Electrical and Electronic Engineering and Department of Applied Physics, University of Tokyo, Tokyo, Japan DOI: 10.1109/ICMTS.2013.6528165 HOVER FOR ABSTRACT | PDF Xplore | |
| Efficient technique for Si validation of level shifters P. Sharma, B. Smith1, D. Hall1, M. Nelson1, U. Lohani Freescale Semiconductor, Inc., Noida, India 1Freescale Semiconductor, Inc., Austin, TX, USA DOI: 10.1109/ICMTS.2013.6528173 HOVER FOR ABSTRACT | PDF Xplore | |
| BSIM4 parameter extraction for tri-gate Si nanowire transistors C. Tanaka, M. Saitoh, K. Ota, T. Numata Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama, Kanagawa, Japan DOI: 10.1109/ICMTS.2013.6528163 HOVER FOR ABSTRACT | PDF Xplore | |
| Reconsideration of the threshold voltage variability estimated with pair transistor cell array K. Terada, N. Higuchi, K. Tsuji Faculty of Information Sciences, Hiroshima University, Hiroshima, Japan DOI: 10.1109/ICMTS.2013.6528155 HOVER FOR ABSTRACT | PDF Xplore | |
| Effective channel length estimation using charge-based capacitance measurement K. Tsuji, K. Terada Faculty of Information Sciences, Hiroshima University, Hiroshima, Japan DOI: 10.1109/ICMTS.2013.6528146 HOVER FOR ABSTRACT | PDF Xplore | |
| Evaluation of 1/f noise variability in the subthreshold region of MOSFETs H. Tuinhout, A. Z. -v. Duijnhoven NXP Semiconductors - Design Platforms, Eindhoven, The Netherlands DOI: 10.1109/ICMTS.2013.6528151 HOVER FOR ABSTRACT | PDF Xplore | |
| Characterisation and integration of Parylene as an insulating structural layer for high aspect ratio electroplated copper coils R. Walker, E. Sirotkin, I. Schmueser, J. G. Terry, S. Smith, J. T. M. Stevenson, A. J. Walton Institute of Integrated Micro and Nano Systems, School of Engineering, Scottish Microelectronics Centre, University of Edinburgh, UK DOI: 10.1109/ICMTS.2013.6528137 HOVER FOR ABSTRACT | PDF Xplore | |
| Comparison of C-V measurement methods for RF-MEMS capacitive switches Jiahui Wang, C. Salm, J. Schmitz MESA Institute for Nanotechnology, University of Twente, Enschede, Netherlands DOI: 10.1109/ICMTS.2013.6528145 HOVER FOR ABSTRACT | PDF Xplore | |
| Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist R. Zhang, Y. Li, J. Murray, A. S. Bunting, S. Smith, C. C. Dunare, J. T. M. Stevenson, M. P. Desmulliez, A. J. Walton SMC, Institute of Integrated Micro and Nano Systems, School of Engineering, Institute of Integrated Systems, University of Edinburgh, Edinburgh, UK DOI: 10.1109/ICMTS.2013.6528142 HOVER FOR ABSTRACT | PDF Xplore |
