IEEE International Conference on Microelectronic Test Structures
ICMTS 2012 Program
2012 Program Booklet
By First Author
| Characterization and modeling methodology for the evaluation of statistical variation of MOSFETs L. Bortesi, L. Vendrame, P. Fantini, A. Spessot, A. L. Lacaita1 Research and Development-Technology Development, Micron Technology, Inc., Agrate-Brianza, Italy 1IFN-CNR, Politecnico of Milano, Milano, Italy DOI: 10.1109/ICMTS.2012.6190653 HOVER FOR ABSTRACT | PDF Xplore | |
| The MEMS 5-in-1 Reference Materials (RM 8096 and 8097) J. Cassard, J. Geist, M. Gaitan, D. G. Seiler Semiconductor and Dimensional Metrology Division, Physical Measurement Laboratory, National Institute for Standards and Technology, USA DOI: 10.1109/ICMTS.2012.6190649 HOVER FOR ABSTRACT | PDF Xplore | |
| Test structures for interdie variations monitoring in presence of statistical random variability G. Castaneda, A. Juge1, G. Ghibaudo, D. Golanski1, D. Hoguet2, J. -M. Portal3, B. Borot1 IMEP_LAHC, Minatec, INPG, Grenoble, France 1STMicroelectronics, Crolles, France 2STMicroelectronics, Crolles, FR 3IM2NP IMT Technopole de Château Gombert France, Marseilles, France DOI: 10.1109/ICMTS.2012.6190609 HOVER FOR ABSTRACT | PDF Xplore | |
| Addressable test structures for MOSFET variability analysis S. Chitrashekaraiah, S. Guo, R. Herberholz, D. Vigar, M. Redford1 CSR Limited, Cambridge, UK 1CSR Technology Inc, 217 Devcon Drive, San Jose, CA, 95112, USA DOI: 10.1109/ICMTS.2012.6190608 HOVER FOR ABSTRACT | PDF Xplore | |
| Impact of mask making imperfections on the performance of matching critical sub-circuit blocks L. J. Choi, M. Poulter, J. de Santis, G. Cestra, L. Moberly, K. Gadepally, H. McCulloh, R. Beera, V. Garg1, K. Green1, J. Prater Texas Instruments, Inc., Santa Clara, CA, USA 1Toppan Photomasks, Inc., Round Rock, TX, USA DOI: 10.1109/ICMTS.2012.6190654 HOVER FOR ABSTRACT | PDF Xplore | |
| Piezoresistive membrane deflection test structure for the evaluation of hermeticity in low cavity volume MEMS and microelectronic packages S. Costello, M. P. Y. Desmulliez, S. McCracken1, C. Lowrie, S. Cargill, A. J. Walton2 MIcroSystems Engineering Centre (MISEC), Institute for Integrated Systems (IIS), School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh, UK 1Centre House, Midlothian Innovation Centre, MCS Limited, Midlothian, UK 2Scottish Microelectronics Centre, Institute of Integrated Systems (lIS), School of Engineering, University of Edinburgh, Edinburgh, UK DOI: 10.1109/ICMTS.2012.6190611 HOVER FOR ABSTRACT | PDF Xplore | |
| Improved precision methodology for access resistance extraction using Kelvin test structures A. Cros, G. Morin, G. Castaneda, F. Dieudonné, J. Rosa TResearch and Development/STD/TPS/ECR, STMicroelectronics, Crolles, France DOI: 10.1109/ICMTS.2012.6190634 HOVER FOR ABSTRACT | PDF Xplore | |
| A novel compact CBCM method for high resolution measurement in 28nm CMOS technology Kin Hooi Dia, Willy Tsao, Cheng Hsing Chien, Zheng Zeng MediaTek, Inc., Hsinchu, Taiwan DOI: 10.1109/ICMTS.2012.6190619 HOVER FOR ABSTRACT | PDF Xplore | |
| Experimental extraction of substrate-noise coupling between MOSFETs and its compact modeling for circuit simulation S. Emoto, T. Miyoshi, M. Miyake, H. J. Mattausch, M. Miura-Mattausch, T. Iizuka1, Y. Sahara1, T. Hoshida1, K. Matsuzawa1, T. Arakawa1 Graduate School of Advanced Science of Matter, Hiroshima University, Higashihiroshima, Japan 1Semiconductor Technology Academic Research Center, Shin-Yokohama, Kanagawa, Japan DOI: 10.1109/ICMTS.2012.6190628 HOVER FOR ABSTRACT | PDF Xplore | |
| Inhomogeneous ring oscillator for WID variability and RTN characterization S. Fujimoto, I. A. K. M. Mahfzul, T. Matsumoto, H. Onodera1 Graduate School of Informatics, Kyoto University, Japan 1CREST, Japan Science and Technology Agency, Japan DOI: 10.1109/ICMTS.2012.6190607 HOVER FOR ABSTRACT | PDF Xplore | |
| Fast and accurate characterizationst of interconnect capacitance network using Degenerated Exhaustive Direct Charge Measurements (DEDCM) M. Goto, J. Taniguchi, K. Takano Agilent Technologies International Japan Limited, Hachioji, Tokyo, Japan DOI: 10.1109/ICMTS.2012.6190659 HOVER FOR ABSTRACT | PDF Xplore | |
| A proposition on test circuit structures using selectively metal-covered transistors for a laser irradiation failure analysis H. Hatano Department of Electrical and Electronic Engineering, Faculty of Science and Technology, Shizuoka Institute of Science and Technology, Fukuroi, Shizuoka, Japan DOI: 10.1109/ICMTS.2012.6190622 HOVER FOR ABSTRACT | PDF Xplore | |
| A universal test structure for the direct measurement of the design margin of even-stage ring oscillators with CMOS latch Y. Hirakawa, A. Motomura, K. Ota, N. Mimura, K. Nakamura Center for Microelectronic Systems, Kyushu Institute of Technology, Iizuka, Fukuoka, Japan DOI: 10.1109/ICMTS.2012.6190605 HOVER FOR ABSTRACT | PDF Xplore | |
| Compact thermal-interaction model for dynamic within chip temperature determination by circuit simulation K. Ishiguro, A. Ueno, A. Toda, M. Miyake, H. J. Mattausch, M. Miura-Mattausch, K. Matsuzawa1, T. Iizuka1, S. Yamaguchi1, T. Hoshida1, A. Kinoshita1, T. Arakawa1 Graduate School of Advanced Science of Matter, Hiroshima University, Higashihiroshima, Japan 1Semiconductor Technology Academic Research Center, Kanagawa, Japan DOI: 10.1109/ICMTS.2012.6190643 HOVER FOR ABSTRACT | PDF Xplore | |
| A diaphragm based piezoelectric AlN film quality test structure N. Jackson, R. O'Keeffe, R. O'Leary1, M. O'Neill2, F. Waldron, A. Mathewson Tyndall National Institute, University College Cork, Cork, Ireland 1University College Cork National University of Ireland, Cork, IE 2Analog Devices Inc., Limerick, Ireland DOI: 10.1109/ICMTS.2012.6190612 HOVER FOR ABSTRACT | PDF Xplore | |
| Active “multi-fingers”: Test structure to improve MOSFET matching in sub-threshold area Y. Joly, L. Lopez1, J. . -M. Portal, H. Aziza, Y. Bert2, F. Julien2, P. Fornara2 IM2NP Laboratory (UMR CNRS 6242), Marseille, France 1S TMicroelectronics, Rousset, France 2STMicroelectronics, Rousset, France DOI: 10.1109/ICMTS.2012.6190652 HOVER FOR ABSTRACT | PDF Xplore | |
| Nano CV probe characterization analysis comparison with conventional CV probe pad analysis T. Kane, M. P. Tenney IBM Systems and Technology Group, Hopewell Junction, NY, USA DOI: 10.1109/ICMTS.2012.6190657 HOVER FOR ABSTRACT | PDF Xplore | |
| 32nm yield learning using addressable defect arrays M. Karthikeyan, J. Cassels, L. Arie IBM Systems and Technology Group, Hopewell Junction, NY, USA DOI: 10.1109/ICMTS.2012.6190620 HOVER FOR ABSTRACT | PDF Xplore | |
| Self-heating parameter extraction of power MOSFETs based on transient drain current measurements and on the 2-cell self-heating model R. Koh, T. Iizuka Technology Development Unit, RENESAS Electronics, Kawasaki, Kanagawa, Japan DOI: 10.1109/ICMTS.2012.6190644 HOVER FOR ABSTRACT | PDF Xplore | |
| Calibration of library element optimization to improve static power V. Kolagunta, S. Sundareswaran1, P. Sharma1, D. Hall1, M. A. Thompson2, B. Smith1, S. Veeraraghavan1 Global Foundries, Inc., Malta, NY, USA 1Freescale Semiconductor, Inc., Austin, TX, USA 2Austin, TX, USA DOI: 10.1109/ICMTS.2012.6190603 HOVER FOR ABSTRACT | PDF Xplore | |
| Simple gate charge (Qg) measurement technique for on-wafer statistical monitoring and modeling of power semiconductor devices V. Krishnamurthy, A. Gyure, P. Francis Texas Instruments, Inc., Santa Clara, CA, USA DOI: 10.1109/ICMTS.2012.6190627 HOVER FOR ABSTRACT | PDF Xplore | |
| A test circuit for extremely low gate leakage current measurement of 10 aA for 80,000 MOSFETs in 80 s Y. Kumagai, T. Inatsuka1, R. Kuroda, A. Teramoto2, T. Suwa2, S. Sugawa2, T. Ohmi2 Graduate School of Engineering, Tohoku University, Aoba-ku, Japan 1Graduate School of Engineering, Tohoku University 2New Industry Creation Hatchery Center, Tohoku University, Sendai, Japan DOI: 10.1109/ICMTS.2012.6190631 HOVER FOR ABSTRACT | PDF Xplore | |
| Dynamic pixel test pattern for CMOS image sensor K. Lee, H. Lee, M. Jang, J. Kim, S. Kim, J. Moon, I. Cho, K. Yoo Hynix Semiconductor Inc., Kyoungi-Do, Korea DOI: 10.1109/ICMTS.2012.6190617 HOVER FOR ABSTRACT | PDF Xplore | |
| An extended de-embedding method for on-wafer components Yu-Ling Lin, Hsiao-Tsung Yen, Ho-Hsiang Chen, Chewn-Pu Jou, Chin-Wei Kuo, Min-Che Jeng, Fu-Lung Hsuch, Chih-Hua Hsiao1, Guo-Wei Huang1 Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, Taiwan 1National Nano Device Laboratories, Hsinchu, Taiwan DOI: 10.1109/ICMTS.2012.6190638 HOVER FOR ABSTRACT | PDF Xplore | |
| In-situ calibration and verification techniques for the characterization of microwave circuits and devices I. Martinez Centellax, Inc., Santa Rosa, CA, USA DOI: 10.1109/ICMTS.2012.6190637 HOVER FOR ABSTRACT | PDF Xplore | |
| Reliability analysis of NAND gates with modified channel length in series n-MOSFETs T. Matsuda, Y. Tokumitsu, H. Hanai, H. Iwata, T. Ohzone1 Department ofInformation Systems Engineering, Toyama Prefectural University, Japan 1Dawn Enterprise, Nagoya, Japan DOI: 10.1109/ICMTS.2012.6190625 HOVER FOR ABSTRACT | PDF Xplore | |
 | Self-biasing and self-amplifying MOSFET mismatch test structure C. C. McAndrew, M. Zunino, B. Braswell Freescale Semiconductor, Inc., Tempe, AZ, USA DOI: 10.1109/ICMTS.2012.6190651 HOVER FOR ABSTRACT | PDF Xplore |
| Evaluation of dynamic bonding stress and interlayer cracking using a combo sensor Y. Miki, H. Watanabe Corporate Technology Development Group, Ricoh Company Limited, Ikeda, Osaka, Japan DOI: 10.1109/ICMTS.2012.6190647 HOVER FOR ABSTRACT | PDF Xplore | |
| A blur-range test structure of collimation-controller-integrated silicon shadow mask for three-dimensional surface patterning with sputtering S. Morishita, M. Kubota, Y. Mita Department of Electrical Engineering and Information Systems, University of Tokyo, Tokyo, Japan DOI: 10.1109/ICMTS.2012.6190615 HOVER FOR ABSTRACT | PDF Xplore | |
| Correlation of optical and electrical test structures for characterisation of copper self-annealing J. Murray, S. Smith1, G. Schiavone1, J. G. Terry1, A. R. Mount2, A. J. Walton1 School of Chemistry, University of Edinburgh, UK 1Institute for Integrated Micro and Nano Systems (Joint Research Institute for Integrated Systems), School of Engineering, Scottish Microelectronics Centre, University of Edinburgh, Edinburgh, UK 2The University of Edinburgh, Edinburgh, Edinburgh, GB DOI: 10.1109/ICMTS.2012.6190635 HOVER FOR ABSTRACT | PDF Xplore | |
| Ring oscillator with calibration circuit for accurate on-chip IR-drop measurement S. Nishizawa, H. Onodera1 Graduate School of Informatics,Kyoto University, Sakyo-ku, Kyoto, JAPAN 1JST-CREST, Japan DOI: 10.1109/ICMTS.2012.6190602 HOVER FOR ABSTRACT | PDF Xplore | |
| Development of a novel system for characterizing MOSFET noise in higher frequency regimes K. Ohmori, R. Hasunuma, K. Yamada JST-CREST, Japan DOI: 10.1109/ICMTS.2012.6190639 HOVER FOR ABSTRACT | PDF Xplore | |
| A novel structure of MOSFET array to measure off-leakage current with high accuracy H. Oishi, T. Suzuki, M. Bairo, S. Mori, K. Ogawa, H. Ohnuma Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Atsugi, Kanagawa, Japan DOI: 10.1109/ICMTS.2012.6190604 HOVER FOR ABSTRACT | PDF Xplore | |
| A novel high accurate analytical technique of the leak current for the product chip T. Okagaki, N. Takeshita, S. Tanaka, S. Tateishi, K. Shibutani, T. Tsutsui, H. Abe, M. Yokota, K. Onozawa Renesas Electronics Corporation, Hyogo, Japan DOI: 10.1109/ICMTS.2012.6190626 HOVER FOR ABSTRACT | PDF Xplore | |
| Electrical characterisation of dry microneedle electrodes for portable bio-potential recording applications F. Pini, C. O'Mahony1, K. G. McCarthy Dept. of Electrical and Electronic Engineering, University College Cork, Cork, Ireland 1Tyndall National Institute, University College Cork, Cork, Ireland DOI: 10.1109/ICMTS.2012.6190624 HOVER FOR ABSTRACT | PDF Xplore | |
| Combined C-V/I-V front-end-of-line measurement S. Polonsky, S. Realov1, J. -H. Liao2, M. Hargrove3, M. Ketchen IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA 1Department of Electrical Engineering, Columbia University, New York, NY, USA 2Systems and Technology Group, IBM, Hopewell Junction, NY, USA 3GLOBALFOUNDRIES, Hopewell Junction, NY, USA DOI: 10.1109/ICMTS.2012.6190656 HOVER FOR ABSTRACT | PDF Xplore | |
| Quantitative wafer mapping of residual stress in electroplated NiFe films using independent strain and Young's modulus measurements G. Schiavone, M. P. Y. Desmulliez1, S. Smith, J. Murray2, E. Sirotkin, J. G. Terry, A. R. Mount3, A. J. Walton Institute for Integrated Micro and Nano Systems, Joint Research Institute for Integrated Systems, School of Engineering, Scottish Microelectronics Centre, The University of Edinburgh, Edinburgh, UK 1MIcro Systems Engineering Centre, joint Research Institute for Integrated Systems, School of Engineering & Physical Sciences, Heriot-Watt University, Edinburgh, UK 2School of Chemistrv, Joseph Black Building, The University of Edinburgh, UK 3School of Chemistrv, Joseph Black Building, The University of Edinburgh, Edinburgh, UK DOI: 10.1109/ICMTS.2012.6190629 HOVER FOR ABSTRACT | PDF Xplore | |
| Simultaneous characterization of mechanical and electrical performances of ultraflexible and stretchable organic integrated circuits T. Sekitani, T. Yokota, K. Kuribara, T. Someya Department of Electrical and Electronic Engineering and Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo, Japan DOI: 10.1109/ICMTS.2012.6190648 HOVER FOR ABSTRACT | PDF Xplore | |
| A compact circuit for wafer-level monitoring of operational amplifier high-frequency performance using DC parametric test equipment Z. G. Sparling, V. C. Tyree, N. Cox, P. T. Vernier MOSIS Service, Information Sciences Institute, Viterbi School of Engineering, University of Southern California, Marina del Rey, CA, USA DOI: 10.1109/ICMTS.2012.6190633 HOVER FOR ABSTRACT | PDF Xplore | |
| New evaluation method of low-k dielectric films by using a gated PN-junction diode and a field MOS transistor Y. Tamaki, M. Ito, M. Hashino, Y. Kawamoto Consortium for Advanced Semiconductor Materials and Related Technologies, Kokubunji, Tokyo, Japan DOI: 10.1109/ICMTS.2012.6190632 HOVER FOR ABSTRACT | PDF Xplore | |
| Study on Device Matrix Array structure for MOSFET gm variability evaluation K. Terada, R. Takeda, K. Tsuji, T. Tsunomura1, A. Nishida1, T. Mogami1 Faculty of Information Sciences, Hiroshima City University, Hiroshima, Japan 1MIRAI-Selete, Tsukuba, Ibaraki, Japan DOI: 10.1109/ICMTS.2012.6190621 HOVER FOR ABSTRACT | PDF Xplore | |
| Phase Change Memory advanced electrical characterization for conventional and alternative applications A. Toffoli, M. Suri, L. Perniola1, A. Persico2, C. Jahan2, J. F. Nodin2, V. Sousa, B. DeSalvo, G. Reimbold LETI, CEA, Grenoble, France 1CEA, LETI, MINATEC Campus, 17 rue des Martyrs, France 2CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 GRENOBLE Cedex 9, France DOI: 10.1109/ICMTS.2012.6190618 HOVER FOR ABSTRACT | PDF Xplore | |
| An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices P. Toniutti, R. Clerc, P. Palestri1, C. Diouf2, A. Cros2, D. Esseni1, F. Boeuf2, G. Ghibaudo, L. Selmi1 IMEP-LAHC, MINA TEC, Grenoble, France 1DIEGM, Udine, Italy 2STMicroelectronics, Crolles, France DOI: 10.1109/ICMTS.2012.6190642 HOVER FOR ABSTRACT | PDF Xplore | |
| A novel high-throughput on-wafer electromechanical sensitivity characterization system for piezoresistive cantilevers G. Tosolini, L. G. Villanueva1, F. Perez-Murano, J. Bausells Instituto de Microelectrónica de Barcelona (CNM, CSIC), Bellaterra, Spain 1California Institute of Technology, Pasadena, CA, USA DOI: 10.1109/ICMTS.2012.6190613 HOVER FOR ABSTRACT | PDF Xplore | |
| A novel test structure for FEOL device CCTG CBCM measurement in advanced 28nm technology W. Tsao, Kin Hooi Dia, Zheng Zeng, Cheng Hsing Chien MediaTek, Inc., Hsinchu, Taiwan DOI: 10.1109/ICMTS.2012.6190658 HOVER FOR ABSTRACT | PDF Xplore | |
| Threshold voltage variation extracted from MOSFET C-V curves by charge-based capacitance measurement K. Tsuji, K. Terada, R. Takeda, T. Tsunomura1, A. Nishida1, T. Mogami1 Faculty of Information Sciences, Hiroshima City University, Hiroshima, Japan 1MIRAI-Selete, Tsukuba, Ibaraki, Japan DOI: 10.1109/ICMTS.2012.6190623 HOVER FOR ABSTRACT | PDF Xplore | |
| Very low frequency noise characterization of semiconductor devices using DC parameter analyzers H. Tuinhout, A. Zegers-van Duijnhoven, A. Heringa NXP Semiconductors-Central Research and Development, Eindhoven, Netherlands DOI: 10.1109/ICMTS.2012.6190641 HOVER FOR ABSTRACT | PDF Xplore | |
| Parameter extraction for relaxation-time based non-quasi-static MOSFET models Z. Zhu, C. C. McAndrew1, Ik-Sung Lim1, G. Gildenblat School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, USA 1Freescale Semiconductor, Inc., Tempe, AZ, USA DOI: 10.1109/ICMTS.2012.6190645 HOVER FOR ABSTRACT | PDF Xplore | |
| Modification and characterisation of material hydrophobicity for surface acoustic wave driven microfluidics H. Zou, Y. Li, S. Smith, A. S. Bunting, A. J. Walton, J. G. Terry Institute for Integrated Micro and Nano Systems, School of Engineering, Scottish Microelectronics Centre, University of Edinburgh, Edinburgh, UK DOI: 10.1109/ICMTS.2012.6190614 HOVER FOR ABSTRACT | PDF Xplore |
