IEEE International Conference on Microelectronic Test Structures
ICMTS 2007 Program
2007 Program Booklet
By First Author
| Rapid Characterization of Threshold Voltage Fluctuation in MOS Devices K. Agarwal, S. Nassif, F. Liu, J. Hayes, K. Nowka IBM, Corporation, Austin, TX, USA DOI: 10.1109/ICMTS.2007.374458 HOVER FOR ABSTRACT | PDF Xplore | |
| Study of Test Structures for Use as Reference Materials for Optical Critical Dimension Applications R. A. Allen, H. J. Patrick1, M. Bishop2, T. A. Germer3, R. Dixson4, W. F. Guthrie5, M. W. Cresswell Semiconductor Electronics Division, National Institute for Standards and Technology, Gaithersburg, MD, USA 1KT Consulting, Inc., Antioch, CA, USA 2International SEMATECH Manufacturing Initiative, Austin, TX, USA 3Optical Technology Division, National Institute for Standards and Technology, Gaithersburg, MD, USA 4Precision Engineering Division, National Institute for Standards and Technology, Gaithersburg, MD, USA 5Statistical Engineering Division, National Institute for Standards and Technology, Gaithersburg, MD, USA DOI: 10.1109/ICMTS.2007.374448 HOVER FOR ABSTRACT | PDF Xplore | |
| Coupling on-wafer measurement errors and their impact on calibration and de-embedding up to 110 GHz for CMOS millimeter wave characterizations C. Andrei, D. Gloria1, F. Danneville, P. Scheer1, G. Dambrine Institut dE28099Electronique, de Microélectronique et de Nanotechnologie, Villeneuve d'Ascq, France 1STMicroelectronics, Crolles, France DOI: 10.1109/ICMTS.2007.374494 HOVER FOR ABSTRACT | PDF Xplore | |
| A unified model for integrated resistors in CMOS technologies I. Aureli, D. Ventrice, C. Codegoni, P. Fantini STMicroelectronics, NVMTD-FTM, Advanced R and D, Agrate-Brianza, Italy DOI: 10.1109/ICMTS.2007.374497 HOVER FOR ABSTRACT | PDF Xplore | |
| Accurate Inductance De-embedding Technique for Scalable Inductor Models V. Blaschke, J. Victory Jazz Semiconductor, Newport Beach, CA, USA DOI: 10.1109/ICMTS.2007.374493 HOVER FOR ABSTRACT | PDF Xplore | |
| A Continuous Model for MOSFET VT Matching Considering Additional Length Effects S. Bordez, A. Cathignol, K. Rochereau1 STMicroelectronics, Crolles, France 1NXP Semiconductors, Crolles, France DOI: 10.1109/ICMTS.2007.374489 HOVER FOR ABSTRACT | PDF Xplore | |
| Automated on-wafer characterization in micro-machined resonators: towards an integrated test vehicle for bulk acoustic wave resonators (FBAR) H. Campanella, P. Nouet1, P. de Paco2, A. Uranga3, N. Barniol3, J. Esteve Centro Nacional de Microelectrónica CNM-CSIC, Campus UAB, Bellaterra, Spain 1UMR-UM2-CNRS, Laboratoire d'Informatique, de Robotique et de Microelectronique de Montpellier LIRMM, Montpellier, France 2Telecommunications Engineering Department, Universitat Autònoma Barcelona, Bellaterra, Spain 3Electronics Engineering Department, Universitat Authnòma de Barcelona, Bellaterra, Spain DOI: 10.1109/ICMTS.2007.374474 HOVER FOR ABSTRACT | PDF Xplore | |
| Improved Test Structure for Thermnal Resistance Scaling Study in Power Devices A. Canepari, G. Bertrand, A. Giry, M. Minondo, S. Ortolland, H. Jaouen, B. Szelag, J. Mourier, J. -P. Chante1 STMicroelectronics, Crolles, France 1INSA Lyon, Villeneuve d'Ascq, France DOI: 10.1109/ICMTS.2007.374488 HOVER FOR ABSTRACT | PDF Xplore | |
| From MOSFET Matching Test Structures to Matching Data Utilization: Not an Ordinary Task A. Cathignol, S. Bordez1, K. Rochereau2, G. Ghibaudo3 STMicroelectronics, Crolles, FR 1STMicroelectronics, Crolles, France 2NXP semiconductors, Crolles, France 3INPG, IMEP, Grenoble, France DOI: 10.1109/ICMTS.2007.374490 HOVER FOR ABSTRACT | PDF Xplore | |
| A Novel RF-WAT Test Structure for Advanced Process Monitoring in SOC Applications D. C. Chen, R. Lee, Y. C. Liu, M. C. Tang, G. Chiang, A. Kuo, C. S. Yeh, S. C. Chien, S. W. Sun Central R&D Division, United Microelectronics Corporation Limited, Hsinchu, Taiwan DOI: 10.1109/ICMTS.2007.374492 HOVER FOR ABSTRACT | PDF Xplore | |
| Extraction of Self-Heating Free I-V Curves Including the Substrate Current of PD SOI MOSFETs Q. Chen, Z. -Y. Wu, R. Y. K. Su, J. -S. Goo, C. Thuruthiyil, M. Radwin, N. Subba, S. Suryagandh, T. Ly, V. Wason, J. X. An, A. B. Icel Advanced Micro Devices, Inc., Sunnyvale, CA, USA DOI: 10.1109/ICMTS.2007.374498 HOVER FOR ABSTRACT | PDF Xplore | |
| FUSI Specific Yield Monitoring Enabling Improved Circuit Performance and Fast Feedback to Production T. Chiarella, M. Rosmeulen, H. Tigelaar1, C. Kerner, A. Nackaerts, J. Ramos, A. Lauwers, A. Veloso, M. Jurczak, A. Rothschild, L. Witters, H. Yu, J. A. Kittl, R. Verbeeck, M. de Potter, I. Debusschere, P. Absil, S. Biesemans, T. Hoffmann IMEC, Leuven, Belgium 1IMEC, Philips Research DOI: 10.1109/ICMTS.2007.374450 HOVER FOR ABSTRACT | PDF Xplore | |
| Understanding the Carbon Impact on Si/SiGe:C HBT Base Current Mismatch S. Danaie, M. Marin, G. Ghibaudo1, J. -C. Vildeuil, S. Chouteau2, I. Sicard, A. Monroy Central R & D, STMicroelectronics, Crolles, France 1IMEP/INPG-Minatec, Grenoble, France 2STMicroelectronics, Central R&D, 850 rue Jean Monnet, F-38926 Crolles, France DOI: 10.1109/ICMTS.2007.374460 HOVER FOR ABSTRACT | PDF Xplore | |
| Quantitative analysis of Joule heating in surface micromachined Greek cross test structures S. Enderling, S. Smith, J. T. M. Stevenson, A. J. Walton Institute of Integrated Micro and Nano Systems, School of Engineering and Electronics, Scottish Microelectronics Centre, University of Edinburgh, UK DOI: 10.1109/ICMTS.2007.374487 HOVER FOR ABSTRACT | PDF Xplore | |
| A 1 Mbit SRAM test structure to analyze local mismatch beyond 5 sigma variation T. Fischer, C. Otte, D. Schmitt-Landsiedel, E. Amirante1, A. Olbrich1, P. Huber1, M. Ostermayr1, T. Nirschl1, J. Einfeld1 Institute for Technical Electronics, Technical University Munich, Munich, Germany 1Infineon Technologies, Neubiberg, Germany DOI: 10.1109/ICMTS.2007.374456 HOVER FOR ABSTRACT | PDF Xplore | |
| Automatic extraction methodology for accurate measurement of effective channel length on 65nm MOSFET technology and below D. Fleury, A. Cros, K. Romanjek1, D. Roy, F. Perrier1, B. Dumont1, H. Brut STMicroelectronics, Crolles, France 1NXP Semiconductors, Crolles, France DOI: 10.1109/ICMTS.2007.374461 HOVER FOR ABSTRACT | PDF Xplore | |
 | A Large Scale, Flip-Flop RAM imitating a logic LSI for fast development of process technology M. Fujii, K. Nii, H. Makino, S. Ohbayashi, M. Igarashi, T. Kawamura, M. Yokota, N. Tsuda, T. Yoshizawa, T. Tsutsui, N. Takeshita, N. Murata, T. Tanaka, T. Fujiwara, K. Asahina, M. Okada, K. Tomita, M. Takeuchi, H. Shinohara Renesas Technology Corporation, Itami, Hyogo, Japan DOI: 10.1109/ICMTS.2007.374469 HOVER FOR ABSTRACT | PDF Xplore |
| Dynamic Analyses of Membranes and Thin Films on Wafer Level R. Gerbach, F. Naumann, M. Ebert, J. Bagdahn, J. Klattenhoff1, C. Rembe1 Fraunhofer Institute of Mechanics of Materials (IWM), Halle, Germany 1Polytec GmbH, Waldbronn, Germany DOI: 10.1109/ICMTS.2007.374486 HOVER FOR ABSTRACT | PDF Xplore | |
| Test Circuit for Study of CMOS Process Variation by Measurement of Analog Characteristics K. M. G. V. Gettings, D. S. Boning Microsystems Technology Laboratories, MIT, Cambridge, MA, USA DOI: 10.1109/ICMTS.2007.374451 HOVER FOR ABSTRACT | PDF Xplore | |
| Evaluation of 300 mm High Resistivity SOI UNIBOND material for RF applications up to millimeter wave using 65 nm CMOS SOI technology F. Gianesello, C. Raynaud1, D. Gloria2, S. Boret, B. Ghyselen3, C. Mazure4 STMicroelectronics, Crolles Cedex, France 1CEA-LETI, Grenoble, France 2STMicroelectronics, Crolles, France 3SOITEC S.A., Bernin, France 4SOITEC SA, Parc Technologique des Fontaines, Bernin, France DOI: 10.1109/ICMTS.2007.374485 HOVER FOR ABSTRACT | PDF Xplore | |
| A New Combined Methodology for Write-Margin Extraction of Advanced SRAM N. Gierczynski, B. Borot1, N. Planes1, H. Brut1 NXP Semiconductors, Crolles, France 1STMicroelectronics, Crolles, France DOI: 10.1109/ICMTS.2007.374463 HOVER FOR ABSTRACT | PDF Xplore | |
| Device Array Scribe Characterization Vehicle Test Chip for Ultra Fast Product Wafer Variability Monitoring C. Hess, S. Saxena1, H. Karbasi2, S. Subramanian2, M. Quarantelli3, A. Rossoni3, S. Tonello3, S. Zhao3, D. Slisher4 PDF Solutions, Inc.orporated, San Jose, CA, USA 1PDF Solutions, Inc.orporated, Richardson, TX, USA 2PDF Solutions, Inc.orporated, San Diego, CA, USA 3PDF Solutions, Inc.orporated, Desenzano, Italy 4IBM Microelectronics, East Fishkill, USA DOI: 10.1109/ICMTS.2007.374472 HOVER FOR ABSTRACT | PDF Xplore | |
| Development and Use of Small Addressable Arrays for Process Window Monitoring in 65nm Manufacturing M. Karthikeyan, A. Gasasira, S. Fox, G. Yeric, M. Hall, J. Garcia1, B. Mitchell2, E. Wolf1 IBM Systems and Technology Group, Synopsys, Austin, TX, USA 1IBM Systems and Technology Group, Hopewell Junction, NY, USA 2Dallas, TX 3Marlborough, MA, USA DOI: 10.1109/ICMTS.2007.374470 HOVER FOR ABSTRACT | PDF Xplore | |
| A Precise Resistance Tracing Technique for a Toggle Mode MRAM Evaluation Y. Katoh, K. Tsuji, H. Hada, N. Kasai System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan DOI: 10.1109/ICMTS.2007.374453 HOVER FOR ABSTRACT | PDF Xplore | |
| Test Structure on SCR Device in Waffle Layout for RF ESD Protection M. -D. Ker, C. -Y. Lin Nanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao Tung University, Taiwan DOI: 10.1109/ICMTS.2007.374482 HOVER FOR ABSTRACT | PDF Xplore | |
| Ring Oscillator Based Test Structure for NBTI Analysis M. B. Ketchen, M. Bhushan1, R. Bolam2 IBM Thomson J.Watson Research Center, Yorktown Heights, NY, USA 1IBM Systems and Technology Group, Hopewell Junction, NY, USA 2IBM Systems and Technology Group, Essex junction, VT, USA DOI: 10.1109/ICMTS.2007.374452 HOVER FOR ABSTRACT | PDF Xplore | |
| High-Q Slow-Wave Transmission Line for Chip Area Reduction on Advanced CMOS Processes I. C. H. Lai, M. Fujishima1 Department of Frontier Informatics, University of Tokyo, Chiba, Japan 1School of Engineering and the School of Frontier Sciences, University of Tokyo, Chiba, Japan DOI: 10.1109/ICMTS.2007.374481 HOVER FOR ABSTRACT | PDF Xplore | |
| Test Structures for Accurate UHF C-V Measurements of Nano-Scale CMOSFETs with HfSiON and TiN Metal Gate K. -T. Lee, J. Schmitz1, G. A. Brown2, D. Heh2, R. Choi2, R. Harris2, S. -C. Song2, B. H. Lee2, I. -S. Han3, H. -D. Lee3, Y. -H. Jeong Department ofElectronic and Electrical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, South Korea 1MESA Institutefor Nanotechnology, University of Twente, Enschede, Netherlands 2SEMATECH, Austin, TX, USA 3Department of Electronics Engineering, Chungnam National University, Daejeon, South Korea DOI: 10.1109/ICMTS.2007.374468 HOVER FOR ABSTRACT | PDF Xplore | |
| Benchmarking the PSP Compact Model for MOS Transistors X. Li, W. Wu, A. Jha, G. Gildenblat, R. van Langevelde1, G. D. J. Smit2, A. J. Scholten2, D. B. M. Klaassen2, C. C. McAndrew3, J. Watts4, M. Olsen, G. Coram, S. Chaudhry, J. Victory Department of Electrical Engineering, Arizona State University, Tempe, AZ, USA 1Philips Research Laboratories, Eindhoven, Netherlands 2NXP Corporate Research, Eindhoven, Netherlands 3Freescale Semiconductor, Inc., Tempe, AZ, USA 4TIBM Semiconductor Research and Development Center, System and Technology Group, Essex Junction, VT, USA DOI: 10.1109/ICMTS.2007.374495 HOVER FOR ABSTRACT | PDF Xplore | |
| Modeling the Mismatch of High-k MIM Capacitors M. Marin, S. Cremer, J. -C. Giraudin, B. Martinet Central R&D, STMicroelectronics, Crolles, France DOI: 10.1109/ICMTS.2007.374466 HOVER FOR ABSTRACT | PDF Xplore | |
| A Test Structure for Analysis of Asymmetry and Orientation Dependence of MOSFETs T. Matsuda, Y. Sugiyama, K. Nohara, K. Morita, H. Iwata, T. Ohzone1, T. Morishita1, K. Komoku1 Department of Information Systems Engineering, Toyama Prefectural University, Japan 1Department of Communication Engineering, Okayama Prefectural University, Japan DOI: 10.1109/ICMTS.2007.374473 HOVER FOR ABSTRACT | PDF Xplore | |
| New Methodology for the Characterization of EEPROM Extrinsic Behaviors D. Medjahed, T. Yao, D. Wojciechowski, P. Gassot, M. Yameogo1 AMI Semiconductor Belgium BVBA, Oudenaarde, Belgium 1Université de Bordeaux 1, Talence, France DOI: 10.1109/ICMTS.2007.374455 HOVER FOR ABSTRACT | PDF Xplore | |
| On-wafer RF Figure-of-Merit Circuit Block Design for Technology Development, Process Control and PDK Validation S. Minehane, J. Cheng, T. Nakatani1, S. Moriyama, B. Aghdaie, M. Sengupta, S. Saxena, S. Winters, H. Karbasi, M. Quarantelli, S. Tonello, M. Redford PDF Solutions Inc., San Diego, CA, U.S.A. 1Corporate R&D Division, Matsushita Electric Industrial Co., Ltd., Kadoma, Kadoma City, Osaka, Japan DOI: 10.1109/ICMTS.2007.374479 HOVER FOR ABSTRACT | PDF Xplore | |
| Differential P+/Nwell varactor High Frequency Characterization Y. Morandini, D. Rapisarda1, J. -F. Larchanche1, C. Gaquiere I.E.M.N, Villeneuve d'Ascq, France 1STMicroelectronics, Crolles, France DOI: 10.1109/ICMTS.2007.374480 HOVER FOR ABSTRACT | PDF Xplore | |
| Analog characterization of dielectric relaxation of MIM capacitor using an improved recovery voltage technique Z. Ning, H. Casier, R. Gillon, H. -X. Delecourt, D. Tack, E. de Vylder, P. van Torre1, D. Hegsted AMI Semiconductor Belgium Bvba, Oudenaarde, Belgium 1Hogeschool GENT, Ghent, Belgium DOI: 10.1109/ICMTS.2007.374465 HOVER FOR ABSTRACT | PDF Xplore | |
| A Systematic Approach to Accurate Evaluation of CD-Metrology Tools N. G. Orji, B. D. Bunday1, R. G. Dixson, J. A. Allgair1 National Institute for Standards and Technology, Gaithersburg, MD, USA 1International SEMATECH Manufacturing Initiative, Austin, TX, USA DOI: 10.1109/ICMTS.2007.374446 HOVER FOR ABSTRACT | PDF Xplore | |
| Electrical Failure Analysis Methodology for DRAM of 80nm era and beyond using Nanoprober Technique H. Park, S. -Y. Han, W. -S. Lee1, C. -H. Jeon, S. Sohn, K. Chae, S. Yamada, W. Yang, D. Park Semiconductor R&D Center, Samsung Electro Mechanics Company Limited, Yongin si, Gyeonggi, South Korea 1Device Research Team, CAE Team, Yongin si, Gyeonggi, South Korea DOI: 10.1109/ICMTS.2007.374454 HOVER FOR ABSTRACT | PDF Xplore | |
| Scalable approach for external collector resistance calculation C. Raya, N. Kauffmann1, F. Pourchon1, D. Celi1, T. Zimmer Laboratoire IXL, Université Bordeaux 1, Talence, France 1STMicroelectronics Central Research and Development, Crolles, France DOI: 10.1109/ICMTS.2007.374464 HOVER FOR ABSTRACT | PDF Xplore | |
| Test Structure for Process and Product Evaluation F. Rigaud, J. M. Portal1, H. Aziza1, D. Nee2, J. Vast2, C. Auricchio3, B. Borot4 STMicroelectronics, Rousset, France 1UMR CNRS 6137,IMT-Technopôle de Château Gombert, L2MP - Laboratoire Matériaux et Microélectronique de Provence, France 2ST Microelectronics, ZI Rousset, Rousset, France 3ST Microelectronics, Agrate Brianza, Italy 4ST Microelectronics,850 rue Jean Monnet, Crolles, France DOI: 10.1109/ICMTS.2007.374471 HOVER FOR ABSTRACT | PDF Xplore | |
| Methodology for performing RF reliability experiments on a generic test structure G. T. Sasse, R. J. de Vries, J. Schmitz MESA Institute for Nanotechnology, University of Twente, Enschede, Netherlands DOI: 10.1109/ICMTS.2007.374478 HOVER FOR ABSTRACT | PDF Xplore | |
| Impact of Transitor Matching on Features of Digital Circuit Blocks U. Schaper, T. Kodytek, W. Kamp, R. Kunemund Infineon Technologies AG, COM BTS, Neubiberg, Germany DOI: 10.1109/ICMTS.2007.374459 HOVER FOR ABSTRACT | PDF Xplore | |
| Faster ESD device characterization with wafer-level HBM M. Scholz, D. Tremoullies, D. Linten, Y. Rolain1, R. Pintelon1, M. Sawada2, T. Nakaei2, T. Hasebe2, G. Groeseneken3 IMEC vzw, Leuven, Belgium 1Faculty of Engineering, Vrije Universiteit Brussel, Belgium 2Hanwa Electronic Industry Company Limited, Wakayama, Japan 3Electrical Engineering Department, IMEC and Katholieke Universiteit Leuven, Leuven, Belgium DOI: 10.1109/ICMTS.2007.374462 HOVER FOR ABSTRACT | PDF Xplore | |
| The rectangular bipolar transistor tetrode structure and its application M. Schroter, S. Lehmann1 ECE Department, University of California, San Diego, La Jolla, CA, USA 1Chair for Electron Devices and Integrated Circuits, Dresden University of Technology, Dresden, Germany DOI: 10.1109/ICMTS.2007.374484 HOVER FOR ABSTRACT | PDF Xplore | |
| Array Based Test Structure for Optical-Electrical Overlay Calibration B. J. R. Shulver, R. A. Allen1, A. J. Walton, M. W. Cresswell1, J. T. M. Stevenson, S. Smith, A. S. Bunting, C. Dunare, A. M. Gundlach, L. I. Haworth, A. W. S. Ross, A. J. Snell Institute for Integrated Micro and Nano Systems, Scottish Microelectronics Centre, School of Engineering and Electronics, University of Edinburgh, Edinburgh, UK 1Semiconductor Electronics Division, National Institute for Standards and Technology, Gaithersburg, MD, USA DOI: 10.1109/ICMTS.2007.374476 HOVER FOR ABSTRACT | PDF Xplore | |
| Extraction of Sheet Resistance and Linewidth from All-Copper ECD Test Structures Fabricated from Silicon Preforms B. J. R. Shulver, A. S. Bunting, A. M. Gundlach, L. I. Haworth, A. W. S. Ross, S. Smith, A. J. Snell, J. T. M. Stevenson, A. J. Walton, R. A. Allen1, M. W. Cresswell1 Institute for Integrated Micro and Nano Systems, University of Edinburgh, Edinburgh, UK 1Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland, U.S.A DOI: 10.1109/ICMTS.2007.374447 HOVER FOR ABSTRACT | PDF Xplore | |
| Electrical Measurement of On-Mask Mismatch Resistor Structures S. Smith, A. Tsiamis, M. McCallum1, A. C. Hourd2, J. T. M. Stevenson2, A. J. Walton2 Institute of Integrated Micro and Nano Systems, School of Engineering and Electronics, Scottish Microelectronics Centre, University of Edinburgh, UK 1Nikon Precision Europe GmbH, West Lothian, UK 2Compugraphics International Limited, Glenrothes, Fife, UK DOI: 10.1109/ICMTS.2007.374445 HOVER FOR ABSTRACT | PDF Xplore | |
| Novel parameter extraction method for low field drain current of nano-scaled MOSFETs T. Tanaka Fujitsu Laboratories Limited, Akiruno, Tokyo, Japan DOI: 10.1109/ICMTS.2007.374496 HOVER FOR ABSTRACT | PDF Xplore | |
| Gate Oxide Leakage and Floating Gate Capacitor Matching Test W. Tian, J. Trogolo, B. Todd, L. Hutter Texas Instruments, Inc., USA DOI: 10.1109/ICMTS.2007.374467 HOVER FOR ABSTRACT | PDF Xplore | |
| Reducing AC impedance measurement errors caused by the DC voltage dependence of broadband high-voltage bias-tees M. P. J. Tiggelman, K. Reimann1, J. Schmitz MESA Institute for Nanotechnology, Department of Semiconductor Components, University of Twente, Enschede, Netherlands 1NXP Semiconductors Research, Eindhoven, Netherlands DOI: 10.1109/ICMTS.2007.374483 HOVER FOR ABSTRACT | PDF Xplore | |
| Development of Eectrilcal On-Mask CD Test Structures Based on Optical Metrology Features A. Tsiamis, S. Smith, M. McCallum1, A. C. Hourd2, O. Toublan3, J. T. M. Stevenson, A. J. Walton Institute of Integrated Micro and Nano Systems, School of Engineering and Electronics, Scottish Microelectronics Centre, University of Edinburgh, Edinburgh, UK 1Nikon Precision Europe GmbH, West Lothian, UK 2Eastfield Industrial Estate, Compugraphics International Limited, Glenrothes, Fife, UK 3French Branch, Mentor Graphics (Ireland) Limited, Saint Ismier, France DOI: 10.1109/ICMTS.2007.374477 HOVER FOR ABSTRACT | PDF Xplore | |
| Excess Base Current Model for Gamma-Irradiated SiGe Bipolar Transistors M. Ullan, J. P. Alegre1, S. Diez, G. Pellegrini, F. Campabadal, M. Lozano, E. Lora-Tamayo Centro Nacional de Microelectróica, CSIC, Barcelona, Spain 1Dpto. Ing. Electrónica y Comunicaciones, Universidad de Zaragoza, Zaragoza, Spain DOI: 10.1109/ICMTS.2007.374475 HOVER FOR ABSTRACT | PDF Xplore | |
| A New Test Structure for Shallow Trench Isolation (STI) Depth Monitor Q. Wang, S. Pendharkar, B. Hu, B. Russell, P. Jones-Williams Texas Instruments, Inc., Dallas, TX, USA DOI: 10.1109/ICMTS.2007.374449 HOVER FOR ABSTRACT | PDF Xplore | |
| Impact of Sinter Process and Metal Coverage on Transistor Mismatching and Parameter Variations in Analog CMOS Technology X. Wu, J. Trogolo1, F. Inoue2, Z. Chen1, P. Jones-Williams1, I. Khan1, P. Madhani Mixed Signal Technology Development, Dallas, TX, USA 1Mixed Signal Technology Development, TTexas Instruments, Dallas, TX, USA 2MIHO8, Inashiki-gun, Ibaraki-Ken, Japan DOI: 10.1109/ICMTS.2007.374457 HOVER FOR ABSTRACT | PDF Xplore | |
| A Transmission-Line Based Technique for De-Embedding Noise Parameters K. H. K. Yau, A. M. Mangan, P. Chevalier1, P. Schvan2, S. P. Voinigescu Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON, Canada 1STMicroelectronics, Crolles, France 2NORTEL, 3500 Carling Ave., Ottawa ON, K2H 8E9, Canada DOI: 10.1109/ICMTS.2007.374491 HOVER FOR ABSTRACT | PDF Xplore |
