IEEE International Conference on Microelectronic Test Structures
ICMTS 2010 Program
2010 Program Booklet
By First Author
| A test structure for statistical evaluation of pn junction leakage current based on CMOS image sensor technology K. Abe, T. Fujisawa, H. Suzuki, S. Watabe, R. Kuroda, S. Sugawa, A. Teramoto1, T. Ohmi1 Graduate School of Engineering, University of Tohoku, Japan 1New Industry Creation Hatchery Center, University of Tohoku, Japan DOI: 10.1109/ICMTS.2010.5466868 HOVER FOR ABSTRACT | PDF Xplore | |
| Ring oscillator based embedded structure for decoupling PMOS/NMOS degradation with switching activity replication F. Ahmed, L. Milor School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA DOI: 10.1109/ICMTS.2010.5466845 HOVER FOR ABSTRACT | PDF Xplore | |
| Test circuit for measuring single-event-induced charge sharing in deep-submicron technologies O. A. Amusan, B. L. Bhuva, M. C. Casey1, M. J. Gadlage, D. McMorrow2, J. S. Melinger2, L. W. Massengill Electrical Engineering and Computer Science Department, Vanderbilt University, Nashville, TN, USA 1NASA, USA 2Naval Research Laboratory, Inc., Washington D.C., DC, USA DOI: 10.1109/ICMTS.2010.5466844 HOVER FOR ABSTRACT | PDF Xplore | |
| On-chip in-situ measurements of Vth and AC gain of differential pair transistors Y. Bando, S. Takaya, T. Ohkawa1, T. Takaramoto1, T. Yamada1, M. Souda1, S. Kumashiro1, M. Nagata Department of Computer Science and Systems Engineering, Kobe University, Japan 1MIRAI-Selete, Japan DOI: 10.1109/ICMTS.2010.5466809 HOVER FOR ABSTRACT | PDF Xplore | |
| Generation, elimination and utilization of harmonics in ring oscillators M. Bhushan, M. B. Ketchen1 IBM Systems and Technology Group, NY, USA 1T.J. Watson Research Center, IBM Research GmbH, Yorktown Heights, NY, USA DOI: 10.1109/ICMTS.2010.5466847 HOVER FOR ABSTRACT | PDF Xplore | |
| On-wafer inductance and resistance characterization of sub-5pH deep silicon via (DSV) V. Blaschke, R. Zwingman TowerJazz Limited, Newport Beach, CA, USA DOI: 10.1109/ICMTS.2010.5466839 HOVER FOR ABSTRACT | PDF Xplore | |
| Combined test structure for systematic and stochastic mosfets and gate resistance process variation assessment L. Bortesi, L. Vendrame, G. Fontana Numonyx, Research and Development Technology Development, Agrate-Brianza, Italy DOI: 10.1109/ICMTS.2010.5466810 HOVER FOR ABSTRACT | PDF Xplore | |
| Electrical characterization of novel PMNT thin-films W. Chen, K. G. McCarthy1, M. Çopuroğlu, S. O'Brien, R. Winfield, A. Mathewson Tyndall National Institute, University College Cork, Ireland 1Department of Electrical & Electronic Engineering, University College Cork, Ireland DOI: 10.1109/ICMTS.2010.5466848 HOVER FOR ABSTRACT | PDF Xplore | |
| Efficient characterization and suppression methodology of edge effects for leakage current reduction of sub-40nm DRAM device S. H. Choi, Y. H. Park, C. H. Park, S. H. Lee, M. H. Yoo, G. T. Kim1 CAE, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea 1School of Electrical Engineering, Korea University, South Korea DOI: 10.1109/ICMTS.2010.5466864 HOVER FOR ABSTRACT | PDF Xplore | |
| A universal structure for SRAM cell characterization X. Deng, T. W. Houston, A. Duong, W. K. Loh Texas Instruments, Inc., Dallas, TX, USA DOI: 10.1109/ICMTS.2010.5466815 HOVER FOR ABSTRACT | PDF Xplore | |
| Novel test structures for temperature budget determination during wafer processing E. J. Faber, R. A. M. Wolters1, J. Schmitz MESA Institute of Nanotechnology, Semiconductor Components Group, University of Twente, Enschede, Netherlands 1NXP Semiconductors, Eindhoven, Netherlands DOI: 10.1109/ICMTS.2010.5466867 HOVER FOR ABSTRACT | PDF Xplore | |
| Fast RF-CV characterization through high-speed 1-port S-parameter measurements R. W. Herfst, P. G. Steeneken1, M. P. J. Tiggelman, J. Stulemeijer2, J. Schmitz MESA Institute of Nanotechnology, University of Twente, Enschede, Netherlands 1NXP Semiconductors, Eindhoven, Netherlands 2Surface Acoustic Wave Components Division, EPCOS Netherlands B.V., Nijmegen, Netherlands DOI: 10.1109/ICMTS.2010.5466829 HOVER FOR ABSTRACT | PDF Xplore | |
| An embedded process monitor test chip architecture S. Idgunji, V. Chandra, C. Pietrzyk, I. Iqbal, R. Aitken, G. Yeric1 Research and Development, ARM, Inc., San Jose, CA, USA 1Research and Development, ARM, Inc., Austin, TX, USA DOI: 10.1109/ICMTS.2010.5466842 HOVER FOR ABSTRACT | PDF Xplore | |
| Investigation on the field leakage current in 0.35μm CMOS technology at high temperature S. T. Kong, P. S. Ronald, C. Lee X-FAB Semiconductor Foundries AG, Plymouth, UK DOI: 10.1109/ICMTS.2010.5466849 HOVER FOR ABSTRACT | PDF Xplore | |
| A bulk micromachined vertical nano-gap Pirani wide-range pressure test structure for packaged MEMS performance monitoring M. Kubota, T. Okada1, Y. Mita1, M. Sugiyama, Y. Nakano2 Institute of Engineering Innovation, Graduate School of Engineering, University of Tokyo, Bunkyo, Tokyo, Japan 1Department of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo, Bunkyo, Tokyo, Japan 2Research Center of Advanced Science and Technology, University of Tokyo, Bunkyo, Tokyo, Japan DOI: 10.1109/ICMTS.2010.5466871 HOVER FOR ABSTRACT | PDF Xplore | |
| Test structures for characterising the integration of EWOD and SAW technologies for microfluidics Y. Li, Y. Q. Fu1, B. W. Flynn, W. Parkes, Y. Liu1, S. Brodie1, J. G. Terry, L. I. Haworth, A. S. Bunting, J. T. M. Stevenson, S. Smith, A. J. Walton Institute of Integrated Micro and Nano Systems (IMNS), [Part of the Institute of Integrated Systems], School of Engineering, University of Edinburgh, UK 1Microsystems Engineering Centre, [Part of the Institute of Integrated Systems], School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh, UK DOI: 10.1109/ICMTS.2010.5466861 HOVER FOR ABSTRACT | PDF Xplore | |
| A test vehicle and a two step procedure to evaluate a massive number of single-walled carbon nanotube field effect transistors I. Martin-Fernandez, M. Sansa, F. Perez-Murano, P. Godignon, E. Lora-Tamayo Instituto de Microelectrónica de Barcelona-Centro Nacional de Microelectrónica-Consejo Superior de Investigaciones Cientäficas, Cerdanyola del Valles, Spain DOI: 10.1109/ICMTS.2010.5466860 HOVER FOR ABSTRACT | PDF Xplore | |
| Comprehensive quality assurance methodology for BSIM4.5 corner parameter extraction H. Masuda, S. Itoh1, H. Koike2, N. Wakita3, R. Inagaki4 Renesas Technology Corporation, Japan 1Seiko-Epson Corporation, Russia 2Semiconductor Technology, Academic Research Center, Japan 3Toshiba Corporation, Japan 4Rohm Company Limited, Thailand DOI: 10.1109/ICMTS.2010.5466819 HOVER FOR ABSTRACT | PDF Xplore | |
| Orientation dependence and asymmetry of subthreshold characteristics in CMOSFETs T. Matsuda, Y. Matsumura, H. Iwata, T. Ohzone1 Department of Information Systems Engineering, Toyama Prefectural University, Toyama, Japan 1Dawn Enterprise, Nagoya, Japan DOI: 10.1109/ICMTS.2010.5466854 HOVER FOR ABSTRACT | PDF Xplore | |
| Pulsed measurement method for characterizing chemical solutions using nanowire field effect transistors M. Mescher, B. Marcelis, M. de Wild, J. H. Klootwijk Micro Systems and Devices, Philips Research Eindhoven, Netherlands DOI: 10.1109/ICMTS.2010.5466863 HOVER FOR ABSTRACT | PDF Xplore | |
| Test structures for characterization of thermal-mechanical stress in 3D stacked IC for analog design N. Minas, G. Van der Plas, H. Oprins, Y. Yang1, C. Okoro1, A. Mercha, V. Cherman, C. Torregiani, D. Perry2, M. Cupac, M. Rakowski, P. Marchal IMEC, Belgium 1Katholieke Universiteit Leuven, Belgium 2Qualcomm CDMA Technologies, Inc., Leuven, Belgium DOI: 10.1109/ICMTS.2010.5466836 HOVER FOR ABSTRACT | PDF Xplore | |
| A Balanced-SeeSaw MEMS swing probe for vertical profilometry of deep micro structures Y. Mita, J. -B. Pourciel1, M. Kubota1, S. Ma1, S. Morishita1, A. Tixier-Mita1, T. Masuzawa1 University of Tokyo, Japan 1LAAS-CNRS, Université de Toulouse, France DOI: 10.1109/ICMTS.2010.5466858 HOVER FOR ABSTRACT | PDF Xplore | |
| Correlation between Direct Charge Measurement (DCM) and LCR meter on deep submicron CMOS test structure capacitance measurement Y. Miyake, M. Goto, S. Fujii, H. Nishimura Agilent Technologies International Japan Limited, Japan DOI: 10.1109/ICMTS.2010.5466830 HOVER FOR ABSTRACT | PDF Xplore | |
| Fully understanding the mechanism of misalignment-induced narrow-transistor failure and carefully evaluating the misalignment-tolerant SRAM-cell layout S. Nakai, Y. Miyazaki, R. Nakamura, M. Suga, T. Tsuruta, M. Yasuda1, T. Kashiwagi, Y. Maki Fujitsu Microelectronics Limited, Japan 1Fujitsu VLSI Limited, Japan DOI: 10.1109/ICMTS.2010.5466834 HOVER FOR ABSTRACT | PDF Xplore | |
| An efficient method of calibrating MOSFET capacitances by way of excluding intra- DUT parasitic contributions Y. Naruta, R. Koh, T. Iizuka NEC Electronics Corporation Limited, Kawasaki, Japan DOI: 10.1109/ICMTS.2010.5466828 HOVER FOR ABSTRACT | PDF Xplore | |
 | Small embedded sensors for accurate temperature measurements in DMOS power transistors M. Pfost, D. Costachescu, A. Podgaynaya1, M. Stecher2, S. Bychikhin2, D. Pogany2, E. Gornik2 Infineon Technologies Romania, IFRO ATV TM, Bucharest, Romania 1Infineon Technologies AG, ATV PTP TSP, Neubiberg, Germany 2Institute of Solid-State Electronics, University of Technology, Vienna, Vienna, Austria DOI: 10.1109/ICMTS.2010.5466872 HOVER FOR ABSTRACT | PDF Xplore |
| A test structure for integrated capacitor array matching characterization W. Posch, G. Promitzer, E. Seebacher Austria Microsystems AG, Austria DOI: 10.1109/ICMTS.2010.5466833 HOVER FOR ABSTRACT | PDF Xplore | |
| Characterization & modeling of gate-induced-drain-leakage with complete overlap and fringing model D. Rideau, V. Quenette, D. Garetto1, E. Dornel1, M. Weybright1, J. P. Manceau1, O. Saxod, C. Tavernier, H. Jaouen STMicroelectronics, Crolles CEDEX, France 1IBM France, Crolles, France DOI: 10.1109/ICMTS.2010.5466816 HOVER FOR ABSTRACT | PDF Xplore | |
| A unique and accurate extraction technique of the asymmetric bottom-pillar resistance for the vertical MOSFET K. Sakui, T. Endoh Center of Interdisciplinary Research, JST-CREST, University of Tohoku, Sendai, Japan DOI: 10.1109/ICMTS.2010.5466812 HOVER FOR ABSTRACT | PDF Xplore | |
| On the validity of bisection-based thru-only de-embedding T. Sekiguchi, S. Amakawa, N. Ishihara, K. Masu Integrated Research Institute, Tokyo Institute of Technology, Yokohama, Japan DOI: 10.1109/ICMTS.2010.5466857 HOVER FOR ABSTRACT | PDF Xplore | |
| Analysis of the performance of a micromechanical test structure to measure stress in thick electroplated metal films S. Smith, N. L. Brockie, J. Murray, C. J. Wilson1, A. B. Horsfall2, J. G. Terry, J. T. M. Stevenson, A. R. Mount3, A. J. Walton Institute of Integrated Micro and Nano Systems (Part of the Joint Research Institute of Integrated Systems), School of Engineering, Scottish Microelectronics Centre, University of Edinburgh, Edinburgh, UK 1IMEC, Leuven, Belgium 2School of Electrical, Electronic and Computer Engineering, Merz Court, University of Newcastle, Newcastle-upon-Tyne, UK 3School of Chemistry, Joseph Black Building, University of Edinburgh, Edinburgh, UK DOI: 10.1109/ICMTS.2010.5466852 HOVER FOR ABSTRACT | PDF Xplore | |
| Fabrication of test structures to monitor stress in SU-8 films used for MEMS applications S. Smith, N. L. Brockie, J. Murray, C. J. Wilson1, A. B. Horsfall2, J. G. Terry, J. T. M. Stevenson, A. R. Mount3, A. J. Walton Institute of Integrated Micro and Nano Systems (Part of the Joint Research Institute of Integrated Systems), School of Engineering, Scottish Microelectronics Centre, University of Edinburgh, Edinburgh, UK 1IMEC, Leuven, Belgium 2School of Electrical, Electronic and Computer Engineering, Merz Court, University of Newcastle, Newcastle-upon-Tyne, UK 3School of Chemistry, Joseph Black Building, University of Edinburgh, Edinburgh, UK DOI: 10.1109/ICMTS.2010.5466870 HOVER FOR ABSTRACT | PDF Xplore | |
| Kelvin resistor structures for the investigation of corner serif Proximity Correction S. Smith, A. Tsiamis, M. McCallum1, A. C. Hourd2, J. T. M. Stevenson, A. J. Walton Institute of Integrated Micro and Nano Systems (Part of the Joint Research Institute of Integrated Systems), School of Engineering, Scottish Microelectronics Centre, University of Edinburgh, UK 1Nikon Precision Europe GmbH, HoustonSuite, Livingston, UK 2Division of Electronic Engineering & Physics, Harris Building, University of Dundee, Dundee, UK DOI: 10.1109/ICMTS.2010.5466866 HOVER FOR ABSTRACT | PDF Xplore | |
| Test structures for characterization of through silicon vias M. Stucchi, D. Perry1, G. Katti2, W. Dehaene2 IMEC, Leuven, Belgium 1Qualcomm CDMA Technologies, San Diego, CA, USA 2ESAT Department, Katholieke Universiteit Leuven, Leuven, Belgium DOI: 10.1109/ICMTS.2010.5466841 HOVER FOR ABSTRACT | PDF Xplore | |
| MOSFET-array for extracting parameters expressing SPICE-parameter variation K. Terada, N. Ekida, K. Tsuji, T. Tsunomura1, A. Nishida1 Faculty of Information Sciences, Hiroshima City University, Asaminami, Hiroshima, Japan 1MIRAI-Selete, Tsukuba, Ibaraki, Japan DOI: 10.1109/ICMTS.2010.5466855 HOVER FOR ABSTRACT | PDF Xplore | |
| New RF intrinsic parameters extraction procedure for advanced MOS transistors J. C. Tinoco, A. G. Martinez-Lopez1, M. Emam2, J. . -P. Raskin2 Departamento de Ingenieräa en Telecomunicaciones, División de Ingenieräa Eléctrica, Facultad de Ingenieräa, Universidad Nacional Auténoma de México, Mexicali, Mexico 1Col. Jardänes de San German, Puerto de Tuxpan s/n entre Puerto Tampico y Chetumal, Universidad Politécnica de la Región Ribereä±a, Tamaulipas, Mexico 2Microwave Laboratory, Université catholique de Louvain, Louvain-la-Neuve, Belgium DOI: 10.1109/ICMTS.2010.5466853 HOVER FOR ABSTRACT | PDF Xplore | |
| Highly automated sequence for Phase Change Memory test structure characterization A. Toffoli, A. Fantini, G. Betti Beneventi1, L. Perniola, R. Kies, V. Vidal2, J. F. Nodin, V. Sousa, A. Persico, J. Cluzel, C. Jahan, S. Maitrejean, G. Reimbold, B. DeSalvo, F. Boulanger CEA-LETI Minatec Grenoble, Grenoble, France 1Universita degli Studi di Modena e Reggio Emilia, Reggio Emilia, Italy 2STMicroelectronics, Crolles, France DOI: 10.1109/ICMTS.2010.5466865 HOVER FOR ABSTRACT | PDF Xplore | |
| SIS wide-band model extraction methodology for SOI on-chip inductor R. O. Topaloglu, J. -S. Goo, A. L. S. Loke1, M. M. Oshima1, S. W. Sim1 Global Foundries, Inc., Sunnyvale, CA, USA 1Advanced Micro Devices, Inc., Sunnyvale, CA, USA DOI: 10.1109/ICMTS.2010.5466850 HOVER FOR ABSTRACT | PDF Xplore | |
| Test structures to quantify contact placement-impacted drain current variations R. O. Topaloglu, Z. -Y. Wu, A. B. Icel Global Foundries, Inc., Sunnyvale, CA, USA DOI: 10.1109/ICMTS.2010.5466822 HOVER FOR ABSTRACT | PDF Xplore | |
| Methodology to evaluate long channel matching deterioration and effects of transistor segmentation on MOSFET matching H. Tuinhout, N. Wils, M. Meijer, P. Andricciola NXP Semiconductors Central Research and Development/Research, Eindhoven, Netherlands DOI: 10.1109/ICMTS.2010.5466824 HOVER FOR ABSTRACT | PDF Xplore | |
| Direct probing of trapped charge dynamics in SiN by Kelvin Force Microscopy E. Vianello, E. Nowak1, D. Mariolle1, N. Chevalier1, L. Perniola1, G. Molas1, J. P. Colonna1, F. Driussi, L. Selmi DIEGM, University of Udine-IUNET, Udine, Italy 1CEA-LETI Minatec Grenoble, Grenoble, France DOI: 10.1109/ICMTS.2010.5466851 HOVER FOR ABSTRACT | PDF Xplore | |
| Influence of metal coverage on transistor mismatch and variability in copper damascene based CMOS technologies N. Wils, H. Tuinhout, M. Meijer NXP Semiconductors Central Research and Development/Research, Eindhoven, Netherlands DOI: 10.1109/ICMTS.2010.5466825 HOVER FOR ABSTRACT | PDF Xplore | |
| Compact models of parasitic resistance of resistors for analog circuits K. Yamada Technology Foundation Dev. Op. Unit, Core Development Division, NEC Electronics Corporation Limited, Kawasaki, Kanagawa, Japan DOI: 10.1109/ICMTS.2010.5466818 HOVER FOR ABSTRACT | PDF Xplore | |
| Global parameter extraction for a multi-gate MOSFETs compact model S. Yao, T. H. Morshed, D. D. Lu, S. Venugopalan, W. Xiong1, C. R. Cleavelin, A. M. Niknejad, C. Hu Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA, USA 1SiTD, Texas Instruments, Inc., Dallas, TX, USA DOI: 10.1109/ICMTS.2010.5466821 HOVER FOR ABSTRACT | PDF Xplore |
